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| Ordering number : EN8731 EMH2601 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 Features * General-Purpose Switching Device Applications * The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 20 10 3 12 1.0 1.2 150 --55 to +150 P-channel -20 10 --2 --8 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=0.8A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 20 1 10 0.4 2.4 4.0 58 71 98 365 77 67 76 99 150 1.3 V A A V S m m m pF pF pF Symbol Conditions Ratings min typ max Unit Marking : FA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71006PE MS IM TC-00000042 No.8731-1/6 EMH2601 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=8V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--4V ID=--0.5A, VGS=-2.5V ID=--0.3A, VGS=1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A IS=--2A, VGS=0V --0.4 1.9 3.2 115 165 260 420 73 60 11.8 33 48 43 4.7 0.75 1.6 --0.83 --1.2 150 235 520 --20 --1 10 --1.4 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0V Ratings min typ 11.2 45 42 46 4.9 0.7 2.0 0.85 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7045-002 Electrical Connection 8 0.2 7 6 5 0.2 0.125 8 5 1 0.5 2.0 0.2 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 1.7 2.1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8 Top view 0.05 0.75 No.8731-2/6 EMH2601 Switching Time Test Circuit [N-channel] [P-channel] VIN 0V --4V VIN ID= --1A RL=10 VDD= --10V VIN 4V 0V VIN VDD=10V ID=1.5A RL=6.67 D PW=10s D.C.1% VOUT D PW=10s D.C.1% VOUT G G EMH2601 P.G 50 EMH2601 P.G 50 S S --8.0V --6.0V 3.0 ID -- VDS 2.5V 2.0 V 4.0V [Nch] --2.0 --1.8 ID -- VDS --4.0V --3.0 V --2. 5V [Pch] 0V . --1 1.8 6.0V 2.5 3.0 Drain Current, ID -- A Drain Current, ID -- A =1.5 VGS V V --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 2.0 1.5 1.0 0.5 8.0V --2 . 8V V VGS= --1.5V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 Drain-to-Source Voltage, VDS -- V 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 IT10403 ID -- VGS Drain-to-Source Voltage, VDS -- V --2.0 --1.8 --1.6 IT10538 [Nch] ID -- VGS [Pch] VDS= --10V VDS=10V Drain Current, ID -- A Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 25C --25 C 5 C Ta= 7 --0.4 --0.2 0 1.5 2.0 IT10404 0 --0.5 Ta= 7 --1.0 25 C --1.5 5C --0.6 --25C --2.0 --2.5 IT10539 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V No.8731-3/6 EMH2601 200 RDS(on) -- VGS [Nch] 700 RDS(on) -- VGS [Pch] Ta=25C Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 180 160 140 600 --0.5A 500 1.5A 120 800mA 100 80 60 40 20 0 0 2 4 6 8 IT10405 400 --1.0A ID= --0.3A ID=300mA 300 200 100 0 0 --2 --4 --6 --8 IT10540 Gate-to-Source Voltage, VGS -- V 180 RDS(on) -- Ta Gate-to-Source Voltage, VGS -- V 500 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 160 140 120 100 80 60 40 20 0 --60 400 300 I D= mA V =1.8 , VGS 80 I D= 0mA =2.5 , VGS V 300 A I D= --0.3 --1.8V , V GS= .5 I D=1 =4.0V A, VGS 200 --2.5V , V GS= = --0.5A ID --4.0V , V GS= = --1.0A ID 100 --40 --20 0 20 40 60 80 100 120 140 160 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 10 yfs -- ID IT10406 Ambient Temperature, Ta -- C 10 [Nch] Forward Transfer Admittance, yfs -- S 7 5 3 2 yfs -- ID IT10541 [Pch] Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V VDS= --10V = Ta 1.0 7 5 3 2 --2 C 5 C 75 1.0 7 5 3 2 C 25 C -25 =Ta C 75 25 C 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 5 7 10 IT10407 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 IS -- VSD Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 5 7 --10 IT10542 [Nch] IS -- VSD [Pch] VGS=0V VGS=0V Source Current, IS -- A Source Current, IS -- A Ta= 75 C 25 C --0.7 5C 0.1 7 5 3 2 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ta= 7 3 2 C --2 5C 25 --0.01 --0.4 --0.5 --0.6 --25 --0.8 --0.9 C --1.0 --1.1 Diode Forward Voltage, VSD -- V IT10408 Diode Forward Voltage, VSD -- V IT10543 No.8731-4/6 EMH2601 5 3 SW Time -- ID [Nch] VDD=10V VGS=4V 5 3 SW Time -- ID [Pch] VDD= --10V VGS= --4V Switching Time, SW Time -- ns Switching Time, SW Time -- ns 2 2 100 7 5 3 2 100 7 5 3 2 td(off) tf td(off) tf tr td(on) 10 7 5 tr td(on) 10 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 1000 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT10409 [Nch] f=1MHz 1000 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT10544 [Pch] f=1MHz Ciss Ciss Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 2 3 2 100 7 5 3 2 0 5 Coss 100 7 5 3 2 Coss Crss Crss 10 15 20 IT10410 0 --5 --10 --15 --20 IT10545 Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS -- Qg Drain-to-Source Voltage, VDS -- V --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 [Nch] VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V VDS=10V ID=3A VDS= --10V ID= --2A 4.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Total Gate Charge, Qg -- nC 3 2 10 7 5 IT10411 Total Gate Charge, Qg -- nC 2 --10 7 5 IT10546 ASO IDP=12A [Nch] 10s ASO IDP= --8A [Pch] 10s Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 op m Drain Current, ID -- A ID=3A 0 1m s s 10 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --2A er ati 10 s on Operation in this area is limited by RDS(on). s (T a= 0m 25 DC 100m s op er ati on Operation in this area is limited by RDS(on). 10 1 0 10 ms s m s C ) 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 --0.01 --0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V IT10412 Drain-to-Source Voltage, VDS -- V IT10547 No.8731-5/6 EMH2601 1.4 PD -- Ta [Nch, Pch] Mounted on a ceramic board (900mm2!0.8mm) Allowable Power Dissipation, PD -- W 1.2 1.0 0.8 To t al di ss 0.6 1u ip nit ati on 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10413 Note on usage : Since the EMH2601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No.8731-6/6 |
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